Impact of traps on current-voltage characteristic of n+-n-n+ diode
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
A model of n+-n-n+ diode is analyzed using analytical and numerical methods. First, it was conducted a phase-plane analysis, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes of the field, bias and concentration throughout the diode for different current values. Expected impoverishment of free-charge carriers near the anode, and enrichment near the cathode was observed. Current-voltage characteristics were built for different concentrations of traps in base. Increasing bias for same value of current with increasing traps concentration was predicted.
Authors and Affiliations
P. M. Kruglenko
Keywords
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- EP ID EP216943
- DOI 10.15407/spqeo20.02.210
- Views 71
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