IMPROVING THE METHOD OF RECEIVING THE PURPOSE OF THE N-GaAs DEPOSITS
Journal Title: Вчені записки Таврійського національного університету імені В. І. Вернадського. Серія: Технічні науки - Year 2018, Vol 29, Issue 6
Abstract
The method of obtaining a porous layer on the n-GaAs substrates is proposed, which differs by applying a current of 30mA amplitude and determines the time of etching which was 3 minutes, which allowed to reduce the unevenness of the porous layer by 5% and obtain porosity of the parameters of the photoluminescence of the porous layer for the batch of substrates.
Authors and Affiliations
А. П. Оксанич, С. Е. Притчин, М. Г. Когдась, О. Г. Холод, М. А. Мащенко
Keywords
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- EP ID EP580333
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