INFLUENCE OF THE METALLIC IMPURITIES IN A3B6 TYPE LAYERED SEMICONDUCTORS ON THEIR ELECTRICAL, MAGNETIC AND STRUCTURAL PROPERTIES
Journal Title: Вимірювальна техніка та метрологія - Year 2017, Vol 1, Issue 78
Abstract
The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. Bode diagrams for InSe crystal with the impurities of nickel at different temperatures ranging from liquid nitrogen to room temperature are analyzed. Topological images of crystal surface obtained by using atomic force microscopy confirmed the layered structure of nickel-intercalated InSe.
Authors and Affiliations
Bohdan Seredyuk
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- EP ID EP280292
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INFLUENCE OF THE METALLIC IMPURITIES IN A3B6 TYPE LAYERED SEMICONDUCTORS ON THEIR ELECTRICAL, MAGNETIC AND STRUCTURAL PROPERTIES
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