INTELLIGENT MEASURING SYSTEM FOR CHARACTERISATION OF DEFECT CENTRES IN SEMI-INSULATING MATERIALS BY PHOTOINDUCED TRANSIENT SPECTROSCOPY
Journal Title: Metrology and Measurement Systems - Year 2005, Vol 12, Issue 2
Abstract
An intelligent measurement system for the characterisation of defect centres in semi-insulating materials is presented. The system utilises two-dimensional analysis of the photocurrent transients digitally recorded in a broad range of temperatures. The spectral analysis is carried out by two independent methods: the two-dimensional correlation procedure and the procedure based on the inverse Laplace transformation algorithm. Parameters of a defect centre are determined using the neural network algorithm which is based on two hidden neurons in the form of two-dimensional sigmoid functions used to obtain a morphological match of the approximating function to the shape of the fold on the spectral surface. The system is shown to be a powerful tool for studies of defect structure of high-resistivity semiconductors.
Authors and Affiliations
M. PAWŁOWSKI, P. KAMIŃSKI, R. KOZŁOWSKI, S. JANKOWSKI
Keywords
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