Investigation of Conductibility Changes of Irradiated p-Si Crystal by X-rays During the Recoverable Deformation
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
Changes in conductivity of irradiated and exposed to room temperature single-crystal p-Si samples in the process of compressing and removing mechanical stress were investigated. It was found that the resistance of the sample increases during its exposure under the load. Gradual and prolonged increases in sample resistance were noticed amid separate deformation cycles. "Radiation memory effect" was found out. It was also found that the sample resistance increases proportionally the square root of irradiation dose during the irradiation by X-rays.
Authors and Affiliations
B. V. Pavlyk, R. M. Lys, R. I. Didyk, J. A. Shykoryak
Keywords
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