Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 2
Abstract
The peculiarities of the crystalandelectronicstructureof V1-xTixFeSb, х = 0 – 0,20, semiconductor solid solution wereinvestigated. Themechanismofgenerationofstructuraldefectsofacceptoranddonornatureisdescribed. In particular the nature of donors in n-VFeSb was established (“a priori doping”) as a result of presence of vacancies in Sb atomic site (4b). The obtained result lays in the basis of the technology for obtaining thermoelectric materials based on n-VFeSb with maximal efficiency of thermal to electrical energy conversion.
Authors and Affiliations
V. V. Romaka, P. -F. Rogl, L. P. Romaka, Yu. V. Stadnyk, R. O. Korzh, V. Ya. Krayovskyy, T. M. Kovbasuk, H. V. Tsygylyk
Keywords
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- EP ID EP306615
- DOI 10.15330/pcss.16.2.335-340
- Views 54
- Downloads 0
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