Low Temperature Range Dielectric Properties and AC Conductivity Behavior of Ta2O5 Thin Film Capacitor Formed with Sol-Gel Spin Coating Method
Journal Title: Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji - Year 2018, Vol 6, Issue 4
Abstract
The dielectric constant ε and the dielectric loss factor ε and AC conductivity of 75 nm thickness tantalum pentaoxide (Ta2O5) thin film capacitor, produced by sol-gel spin coating process on Corning glass substrates, have been investigated in the frequency range of 10 Hz – 100 kHz and the temperature range of 193–293 K. It was found that dielectric constant of the Ta2O5 thin film capacitor changes between 7 and 9 with increasing temperature at 1 kHz standart frequency value. The dielectric constant was found to decrease with increasing frequency and to increase with increasing temperature. The maximum barrier height Wm is calculated from the frequency dependence of the dielectric loss ε" at different temperatures. Its value obtained 0.14 eV and 0.093 eV at 10 Hz–2 kHz and 2 kHz–12 kHz frequency range respectively. This type of dielectric properties was associated with a carrier hopping process, interfacial and dipolar polarization processes. The experimental results of the Ta2O5 thin film capacitor indicate that the AC conductivity depend on the frequency and temperature. The AC conductivity behaviour was found to obey the power law ωs with the frequency exponent s decreasing with increasing temperature. It has been determined that the temperature dependence of AC conductivity in the low frequency range is compatible with the Correlated Barrier Hopping (CBH) model.
Authors and Affiliations
Saffettin YILDIRIM
Keywords
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- EP ID EP491251
- DOI 10.29109/gujsc.428691
- Views 84
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