Modeling of high-speed electronic devices
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2013, Vol 0, Issue 54
Abstract
Introduction. The theme of this publication is the modeling of electronic tools that operate in the frequency range from zero to terahertz and higher. Application of new concepts and technologies, including biotechnology and nanotechnology in the development of monolithic integrated circuits led to a backlog of technologies of projecting from technologies and experimental research and manufacturing. The aim of this work is to develop algorithms for analysis, reflecting not only topological as well as morphological properties of the object, that is designing within the framework of accounting EMI communicational transmission of energy and information in the volume of the monolithic integrated circuit. Basic steps for constructing the algorithm. The object of design is presented in the form of basic elements, which can be combined with a communication structure. The object of design is presented in the form of basic elements, which can be combined with a communication structure. There are three types of matrix equations: component; component - communication structure; communication structure. Systems of equations are reduced to standardized descriptors of mathematical model by which to understand current of poles and voltage arcs whole set of basic elements. In this way obtained mathematical model that can be implemented in CAD nano and micro technology electronics. Conclusions. Mathematical models of analysis of high-speed digital and analog electronic means. The algorithm allows morphological optimization is to minimize the adverse effects outside the system of electromagnetic interaction between the components and communicator.
Authors and Affiliations
V. Kudrya
Keywords
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- EP ID EP309120
- DOI 10.20535/RADAP.2013.54.151-159
- Views 46
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