Models Semiinsulating Layers of Gallium Arsenide in Their Formation of Multiply Charged Ion Implantation
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
The technology multiply implantation of impurities, which allow lateral and vertical insulating layers. Experimental study on the creation of high-and thermostable insulating layers in ion-doped n +-n - i-semiinsulating structures on GaAs.
Authors and Affiliations
S. P. Novosyadlyy, S. M. Marchuk, V. M. Varvaruk, L. V. Melnyk
Keywords
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