CHARACTERISTICS OF H2S REMOVAL BY HYDRODYNAMIC CAVITATION EFFECT
Journal Title: International Journal of Engineering Sciences & Research Technology - Year 0, Vol 5, Issue 1
Abstract
In this study, a cavitation effect was used to remove H2S which is one of the main causes behind complaints of offensive odors. The result of the optimization gas flow rate and water flow rate to remove H2S using the central composite method showed that the removal rate of H2S increases as the gas flow rate decreases and the water flow rate increases at the gas flow rate of 1.39 LPM and water flow rate of 2.16 LPM, the maximum removal rate of H2S through reaction optimization was estimated to be 96.1 %.
Authors and Affiliations
Kichul Cho
Keywords
Related Articles
- EP ID EP112092
- DOI -
- Views 68
- Downloads 0
DETECTION OF COMPUTER VIRUSES USING WELM_ACO
Computer viruses are big threat for our society .The expansion of various new viruses of varying forms make the prevention quite tuff .Here we proposed WELM_ACO to detect computer viruses. The proposed method efficient...
COD Removal of Different Industrial Wastewater by Fenton Oxidation Process
Advanced oxidation processes are possibly one of the most effective methods for the treatment of wastewater containing organic products (effluents from chemical and agrochemical industries, the textile industry,...
CLASSIFICATION OF EEG SIGNAL DATA USING HYBRID OF NEURO-FUZZY
Brain Computing interface technology represents a very highly growing field now-a-days for the research because of its unique applications system. In this paper we investigate classification methods of mental comm...
IMPORTANCE OF CUSTOMER RELATIONSHIP MANAGEMENT (CRM) IN INDIAN PRIVATE HOSPITALS
Hospital plays very important role in mankind as it provides healthcare facilities. In last decades there has been tremendous, spectacular development in the health care and management. India is also witness of this d...
GROWTH, MORPHOLOGICAL, STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF NITROGEN DOPED ZINC OXIDE THIN FILM ON POROUS GALLIUM NITRIDE TEMPLATE
Gallium nitride (GaN) is susceptible of producing efficient display and lighting devices. Low cost hybrid heterostructured lighting devices are developed by combining zinc oxide (ZnO) with GaN that has gained much more...