PERFORMANCE EVALUATE OF PARTIALLY DEPLETED AND FULLY DEPLETED SOI MOSFET AT 32 NM TECHNOLOGY
Journal Title: International Journal of Engineering Sciences & Research Technology - Year 2015, Vol 4, Issue 4
Abstract
this this paper presents an performance evaluate of partially depleted soi (pdsoi) mosfet and fully depleted soi (fdsoi) mosfet at 32 nm technology. Silicon on insulator (SOI) technology refers for use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance. There are two type of soi mosfet devices pdsoi (partially depleted soi) and fdsoi (fully depleted soi) mosfets. The soi mosfet having silicon junction which is above of an electrical insulator which is silicon dioxide or also known as sapphire, the silicon dioxide is used for short channel effect in microelectronics and sapphire is used for high performance R.F. ad radio sensitive application.
Authors and Affiliations
Jitendra Gochare , Pallavi Choudhary
Keywords
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