New method for estimating the refractive index of optical materials in spectrally selective elements
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
A numerical simulation of the scattering indicatrix in optical spectral-selective cylindrical form elements has been performed. As it follows from the results of the calculations, the shape of the scattering indicatrix of these elements is unambiguously determined by the refractive index of material from which they are made. Location of angular peaks in the indicatrix in combination with its shape allows to estimate the refractive index with sufficiently high degree of accuracy.
Authors and Affiliations
A. A. Manko, G. S. Svechnikov
Keywords
Related Articles
- EP ID EP178118
- DOI 10.15407/spqeo19.02.169
- Views 96
- Downloads 0
Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
The comparative analysis of optical characteristics inherent to TiO2/SiC and TiO2/por-SiC/SiC structures has been performed. It has been shown that, in these structures regardless of the substrate structure, formation of...
Search of mode wavelengths in planar waveguides by using Fourier transform of wave equation
The article describes a numerical method based on Fourier transform for studying propagating optical waves in dielectric planar waveguides. The inverse problem to the known direct one in waveguide investigation is propos...
Carbon ceramics from plants: Graphitization of biomorphic matrixes
Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from...
Fluorescence of molecules placed near a spherical particle: Rabi splitting
Theoretical study of spontaneously emitted spectra of point-like source placed near spherical Ag particle was performed. It was shown that near-field electromagnetic interaction between a point-like emitter and spherical...
Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals
A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a...