Numerical Simulation of the Conductivity Relaxation in the High Resistivity Semiconductor
Journal Title: Mathematical Modelling and Analysis - Year 2007, Vol 12, Issue 3
Abstract
A theoretical model describing the relaxation of charge carriers in semiconductors of high resistance under the influence of the laser pulses is presented. It is demonstrated that parameters of the trapping states relevant to the processes of the conductivity relaxation can be defined by fitting the experimental data. Time evolution of the conductivity of the [i]GaAs [/i]bulk semiconductor under the influence of nanosecond and picosecond laser pulses is considered. Effect of two laser pulses, when the first one results in population of the trapping state and the second one induces its depopulation, is also considered.
Authors and Affiliations
A. Pincevičius, M. Meilūnas , N. Tumanova
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