OBTAINANCE AND PROPERTIES OF UV SENSORS ON GAP SUBSTRATE WITH MODIFIED SURFACE
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 3
Abstract
Photoelectric properties of contacts Ni-GaP produced on n-GaP surface with different surface processing methods are investigated. After etching in “aqua regia” the substrate had mirror surface (type 1) , which after processing in KOH+HNO3 = 1:50 melt visually perceive as matte (type 2). AFM topogram showed that (type 2 ) samples are characterized by structure consisted of identically oriented pyramids with 2-5 μm base. which consist of nanopyramid association with 10-100 nm lateral sizes. The presence of this surfaced nanostructure causes set of photovoltaic features in Ni-GaP contacts. The first of these is a substantially great point sensitivity – 0,35 A/Vt , that for diodes with mirror surface equal to 0,1A/Vt. The circuit voltage of type 2 samples reaches about 0,9 V while for type 1 samples it doesn’t exceed 0,5 V. The surfaced nanostructure also causes decrease of surfaced recombination speed with appearance of band with maximum 3,2 eV in photosensitivity spectra , corresponding to the energy of direct junctions in GaP.
Authors and Affiliations
V. P. Makhniy, G. I. Bodyul, І. І. Herman, V. M. Skllyarchuk
Keywords
Related Articles
- EP ID EP397120
- DOI 10.18524/1815-7459.2016.3.78645
- Views 83
- Downloads 0
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