On The Effect of Electron-Hole Recombination in Disordered GaAs-Aa1-xALAs Multi-quantum Well Structure
Journal Title: International Journal of Fundamental Physical Sciences - Year 2012, Vol 2, Issue 4
Abstract
The disordered electron-hole recombination in multi-quantum well was investigated using analytical method based on the rate equations. The results show extreme broad distribution of the recombination time which depends exponentially on the distances between the recombining excitons. The energies at each localised state shows an energy splitting between the electronic ground state and the first excited state of 0.0038eV.
Authors and Affiliations
Uno E. Uno, Moses E. Emetere, Isah K. U, Umaru Ahmadu
Keywords
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- EP ID EP599322
- DOI 10.14331/ijfps.2012.330037
- Views 64
- Downloads 0
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