Оptical active area light-diodes parameters under influence of radiating radiation
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2009, Vol 0, Issue 39
Abstract
The ratio determining change of the carrier life time in semi-conductor materials under influence of radiation are received
Authors and Affiliations
N. Rudenko, I. Stuguk
Keywords
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- EP ID EP309623
- DOI 10.20535/RADAP.2009.39.126-130
- Views 63
- Downloads 0
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