Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 2
Abstract
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of tungsten, are considered in the paper. A highly effective technology for theformation of capsular layers of AlN and BN nitride films by high-frequency magnetron sputtering of the propertarget in nitric plasma for the realization of GaAs-based MOS-transistors is developed.
Authors and Affiliations
S. P. Novosyadlyi, V. I. Mandzyuk, N. T. Humeniuk, І. Z. Huk
Keywords
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- EP ID EP411371
- DOI 10.15330/pcss.19.2.186-190
- Views 56
- Downloads 0
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