Performance Investigation of Dmcg-Hcptfet
Journal Title: International Journal of Engineering and Science Invention - Year 2018, Vol 7, Issue 4
Abstract
The Tunnel Field-Effect Transistor (TFET) Based On Charge Plasma Concept Efficiently Replaces The Conventional TFET As It Offers Fabrication Simplicity And It Can Be Used For Ultra-Low-Power Applications. Charge Plasma TFET (CPTFET) With Hetero Materials Is Developed For The Enhancement Of Device Performance. For This, Instead Of Silicon In Source Region A Narrow Band Gap Material (Inas) Is Used For Reducing The Lateral Tunneling Distance At The Source/Channel Interface. The Reduced Tunneling Width At The Source/ Channel Junction Enables Higher Band-To-Band Tunneling Generation Rate, Thus The Device Offers Higher ON-State Current. To Further Improve ON-State Current A Dual Material Control Gate Hetero Junction-Charge-Plasma-Based Tunnel FET (DMCG-HCPTFET) Is Presented For The First Time. In This Context, A Comparative Study Of CPTFET And Hetero Junction Charge Plasma TFET (H-CPTFET) Has Been Performed In Terms Of Transfer Characteristic (Ids–Vgs) And Transconductance (Gm).
Authors and Affiliations
Munni Kumari, Dr. V. Malleswara Rao
Keywords
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