Performance limits of terahertz zero biased rectifying detectors for direct detection
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (opt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve opt ~ 23 kV/W and NEPopt ~ 110–12 W/Hz1/2, respectively. At low radiation frequency in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (hetero-junction FETs) with comparable device impedances.
Authors and Affiliations
A. G. Golenkov, F. F. Sizov
Keywords
Related Articles
- EP ID EP178066
- DOI 10.15407/spqeo19.02.129
- Views 89
- Downloads 0
Structural properties of chalcogenide glasses As2Se3 doped with manganese
The paper presents results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The fun...
Dielectric spectroscopy of CuInSe2 single crystals
The results of high-frequency dielectric measurements with obtained α-CuInSe2 single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the densit...
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a p...
Self-organization in irradiated semiconductor crystals caused by thermal annealing
Annealing of complex semiconductors GaP and CdP 2 , irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α -particles, was carried out and main electrical parameters (co...
Nanoferroics: State-of-art, gradient-driven couplings and advanced applications (Author’s review)
Ferroics and multiferroics are unique objects for fundamental physical research of complex nonlinear processes and phenomena that occur in them within micro- or nanoscale. Due to the possibility of their physical propert...