Performance limits of terahertz zero biased rectifying detectors for direct detection

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Performance limits of terahertz zero biased rectifying detectors for direct detection

Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2

Abstract

Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (opt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve opt ~ 23 kV/W and NEPopt ~ 110–12 W/Hz1/2, respectively. At low radiation frequency  in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (hetero-junction FETs) with comparable device impedances.

Authors and Affiliations

A. G. Golenkov, F. F. Sizov

Keywords

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EP ID EP178066
DOI 10.15407/spqeo19.02.129
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