Radioengineering and optic models in nanoelectronics
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2010, Vol 0, Issue 43
Abstract
Application of radioengineering and optic models to nanoelectronic problems is discussed. Analytical expressions for resonant parameters and characteristics of typical barrier structures are received. Characteristics illustrating the efficiency of such approach are presented.
Authors and Affiliations
E. Nelin
Keywords
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- EP ID EP309498
- DOI 10.20535/RADAP.2010.43.32-50
- Views 83
- Downloads 0
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