Redistribution of Nickel Ions Embedded within Indium Phosphide Via Low Energy Dual Ion Implantations.

Abstract

Transition-metal doped Indium Phosphide (InP) has been studied over several decades for utilization in optoelectronics applications. Recently, interesting magnetic properties have been reported for metal clusters formed at different depths surrounded by a high-quality InP lattice. In this work, we have reported accumulation of Ni atoms at various depths in InP via implantation of Ni- followed by H– and subsequently thermal annealing. Prior to the ion implantations, the ion implant depth profile was simulated using an ion-solid interaction code SDTrimSP, incorporating dynamic changes in the target matrix during ion implantation. Initially, 50 keV Ni- ions are implanted with a fluence of 2 × 1015 atoms cm-2, with a simulated peak deposition profile approximately 42 nm from the surface. 50 keV H- ions are then implanted with a fluence of 1.5 × 1016 atoms cm-2. The simulation result indicates that the H- creates damages with a peak defect centre ~400 nm below the sample surface. The sample has been annealed at 450°C in an Ar rich environment for approximately 1hr. During the annealing, H vacates the lattice, and the formed nano-cavities act as trapping sites and a gettering effect for Ni diffusion into the substrate. The distribution of Ni atoms in InP samples are estimated by utilizing Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy based depth profiling while sputtering the sample with Ar- ion beams. In the sample annealed after H implantation, the Ni was found to migrate to deeper depths of 125 nm than the initial end of range of 70 nm.

Authors and Affiliations

Daniel C. Jones, Joshua M. Young, Wickramaarachchige J. Lakshantha, Satyabrata Singh, Todd A. Byers, Duncan L. Weathers, Floyd D. McDaniel, Bibhudutta Rout

Keywords

Related Articles

Agent-based Model of Oxidation Reactions of Ferrous Ions

Molecules in comets are formed through chemical oxidation reactions induced by radiation. Thesereactions can be simulated in laboratory experiments applying gamma radiation to samples at low temperatures. The kinetics of...

Redistribution of Nickel Ions Embedded within Indium Phosphide Via Low Energy Dual Ion Implantations

Transition-metal doped Indium Phosphide (InP) has been studied over several decades for utilization in optoelectronics applications. Recently, interesting magnetic properties have been reported for metal clusters formed...

Applications of EM and Gravitational Force Strengths in Unification

By implementing the unified mass unit MC ≅ √e2/4πε0G , the authors made an attempt to fit and understand the key ‘quantum’ and ‘nuclear’ physical parameters. With MC and by considering the electromagnetic and gravitation...

Possible Alpha and 14C Cluster Emission From Hyper Radium Nuclei in The Mass Region A = 202-235

The possibilities for the emission of 4He and 14C clusters from hyper 202 235ΛRa are studied using our Coulomb and proximity potential model (CPPM) by including the lambda-nucleus potential. The predicted half lives show...

Energy Transfer Dye Laser Study of Influence of Various Coumarin Dyes on the Laser Performance of Rh590(Cl) Dye

Different coumarin dyes(C440, C460, C480, C485, C500 and C540A) are mixed with Rh590(Cl) in ethanol. The effect of coumarin dyes and their concentration on the laser gain properties and photostabilities of Rh590(Cl) is s...

Download PDF file
  • EP ID EP569044
  • DOI 10.15415/jnp.2018.61002
  • Views 226
  • Downloads 0

How To Cite

Daniel C. Jones, Joshua M. Young, Wickramaarachchige J. Lakshantha, Satyabrata Singh, Todd A. Byers, Duncan L. Weathers, Floyd D. McDaniel, Bibhudutta Rout (2018). Redistribution of Nickel Ions Embedded within Indium Phosphide Via Low Energy Dual Ion Implantations.. Journal of Nuclear Physics, Material Sciences, Radiation and Applications, 6(1), 9-15. https://europub.co.uk/articles/-A-569044