Simulation of Self-Diffusion Effect in Gallium Phosphide Monocrystals
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
The processes of self-diffusion of P and Ga atoms by molecular dynamics method were considered. Shown that interstitial P atoms starts its movement through the crystal at T = 1 K, Ga – at T = 100 K. The transition from interstitial diffusion mechanism to the vacancy for P atom starts at 900 K, for Ga – at 500 K. Diffusion constants for Pi and Gai atoms were calculated.
Authors and Affiliations
O. M. Hontaruk, O. V. Konoreva, M. B. Pinkovska, V. P. Tartachnyk
Keywords
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