Simulation of Self-Diffusion Effect in Gallium Phosphide Monocrystals

Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2

Abstract

The processes of self-diffusion of P and Ga atoms by molecular dynamics method were considered. Shown that interstitial P atoms starts its movement through the crystal at T = 1 K, Ga – at T = 100 K. The transition from interstitial diffusion mechanism to the vacancy for P atom starts at 900 K, for Ga – at 500 K. Diffusion constants for Pi and Gai atoms were calculated.

Authors and Affiliations

O. M. Hontaruk, O. V. Konoreva, M. B. Pinkovska, V. P. Tartachnyk

Keywords

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  • EP ID EP299007
  • DOI -
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How To Cite

O. M. Hontaruk, O. V. Konoreva, M. B. Pinkovska, V. P. Tartachnyk (2014). Simulation of Self-Diffusion Effect in Gallium Phosphide Monocrystals. Фізика і хімія твердого тіла, 15(2), 264-267. https://europub.co.uk/articles/-A-299007