slugBASIC INTRODUCTION TO SINGLE ELECTRON TRANSISTOR
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2013, Vol 1, Issue 1
Abstract
The goal of this paper is to review in brief the basic physics of nanoelectronic device single - electron transistor [SET] as well as prospective applications and problems in their applications. The principles followed by SET device i.e. Coulomb Blockade, Kondo Effect that is helpful in a number of applications. SET functi oning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies .
Authors and Affiliations
Varun Mittal
Keywords
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