Specific features of defect formation in the nSi <P> single crystals at electron irradiation
Journal Title: Восточно-Европейский журнал передовых технологий - Year 2018, Vol 6, Issue 12
Abstract
Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si <P>, irradiated by different fluxes of electrons with an energy of 12 MeV. It is shown that for the examined silicon single crystals at electronic irradiation, it is quite effective to form a new type of radiation defects belonging to the VO<sub>i</sub>P complexes (A-center, modified with an additive of phosphorus). Based on the solutions to electroneutrality equation, we have derived dependences of activation energy for the deep level E<sub>1</sub>=E<sub>C</sub>–0,107 eV, which belongs to the VO<sub>i</sub>P complex, on uniaxial pressure along the crystallographic directions [100] and [111]. By using a method of least squares, we have constructed approximation polynomials for calculating these dependences. At orientation of the deformation axis along the crystallographic direction [100], the deep level E<sub>1</sub>=E<sub>C</sub>–0.107 eV will be decomposed into two components with a different activation energy. This explains the nonlinear dependences of activation energy of the deep level E<sub>1</sub>=E<sub>C</sub>–0.107 eV on the uniaxial pressure P≤0.4 GPa. For pressures P>0.4 GPa, the decomposition of this deep level is significant and one can assume that the deep level of the VO<sub>i</sub>P complex will interact only with two minima in the silicon conduction zone while a change in the magnitude of activation energy would be linear for deformation. For the case of uniaxial pressure P≤0.4 GPa along the crystallographic direction [111] a change in the activation energy for the VO<sub>i</sub>P complex is described by a quadratic dependence. Accordingly, the offset in the deep level E<sub>1</sub>=E<sub>C</sub>–0.107 eV for a given case is also a quadratic function for deformation. Different dependences of activation energy of the VO<sub>i</sub>P complex on the orientation of a deformation axis relative to different crystallographic directions may indicate the anisotropic characteristics of this defect. The established features in defect formation for the n-Si <P> single crystals, irradiated by electrons, could be applied when designing various instruments for functional electronics based on these single crystals
Authors and Affiliations
Sergiy Luniov, Andriy Zimych, Mykola Khvyshchun, Volodymyr Maslyuk
Keywords
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- EP ID EP528352
- DOI 10.15587/1729-4061.2018.150959
- Views 51
- Downloads 0
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