STUDY OF THE PROCESSES OF DEFECT FORMATION IN SILICON, DOPED WITH COBALT
Journal Title: World Journal of Engineering Research and Technology - Year 2018, Vol 4, Issue 2
Abstract
The processes of formation of deep centers in silicon mixed with cobalt are investigated by means of methods of capacitive spectroscopy. It was found that in n-Si, doped with cobalt formed four deep levels with fixed energy of ionization: Ec-0.20 eV, Ec-0.33 eV, Ec –0.45 eV and Ec –0.54 eV with capture cross section of charge carriers n=410-17 cm2, n =210-15 cm2, n =1.110-15 cm2 and n =1.510-15 cm2, respectively. It is shown that in the samples p-Si, doped with cobalt there is only one level Еv +0.32 eV with charge carrier capture sections р=210-16 cm2, respectively.
Authors and Affiliations
Sharifa B. Utamuradova
Keywords
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