STUDY THE EFFECT OF CHANNEL DOPING CONCENTRATION AND SOI LAYER THICKNESS ON ELECTRICAL BEHAVIOUR OF SOI MOSFET USING SILVACO TCAD SIMULATOR
Journal Title: International Journal of Management, IT and Engineering - Year 2012, Vol 2, Issue 8
Abstract
This paper presents the result of process and device simulation using silvaco TCAD tools to develop SOI MOSFET. The aim of this simulation work is to study effect of channel doping concentration and SOI layer thickness on electrical behaviour of the device. The results obtained show that as channel doping concentration decreases threshold voltage decreases and good saturation region in Id-Vd curve is obtained. Also on decreasing soi layer thickness, threshold voltage and sub threshold swing decreases. Device is virtually fabricated using ATHENA software and simulation is done with help of ATLAS software and all graphs are plotted using Tonyplot in silvaco.
Authors and Affiliations
Sapna and Bijender Mehandia
Keywords
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