Термометричні характеристики інтерметалічного напівпровідника n-ZrNiSn, сильнолегованого акцепторною домішкою Y
Journal Title: Вимірювальна техніка та метрологія - Year 2009, Vol 1, Issue 70
Abstract
The temperature and concentration dependencies of resistivity, thermopower and also power descriptions of Zr1- YxNiSn semiconductor in ranges, T = 80 ¸ 380 K and x = 0 ¸ 0,25, respectively were investigated.
Authors and Affiliations
Володимир Ромака, Любов Ромака, Андрій Горинь
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