THE EFFECT OF RADIATION ON FUNDAMENTAL PARAMETERS OF A SILICON-BASED SEMICONDUCTOR STRUCTURE
Journal Title: World Journal of Engineering Research and Technology - Year 2018, Vol 4, Issue 1
Abstract
We report the results of the study of influence of radiation on voltage drop and resistivity of silicon power diodes. It was shown that the increase in the voltage drop in samples exposed to radiation is largely associated with the increase in the resistivity of the base region.
Authors and Affiliations
Dr. Karimov A. V.
Keywords
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- EP ID EP660528
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