The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 2
Abstract
It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.
Authors and Affiliations
Mark Ruvinskii, Borys Ruvinskii, Oksana Kostyuk
Keywords
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- EP ID EP235103
- DOI 10.15330/pcss.17.1.7-10
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