The Local Electron Interaction with the Defect Potential in CdTe:Cl Crystals
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
The processes of the electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in Cl-doped CdTe samples with impurity concentration (5×1016 ÷ 5×1017 cm-3 are considered. The temperature dependences of the electron mobility and Hall factor in temperature range 25 ÷ 590 K are calculated.
Authors and Affiliations
O. P. Malyk, H. A. Il’chuk, V. M. Rodych
Keywords
Related Articles
- EP ID EP317356
- DOI -
- Views 50
- Downloads 0
Crystal-Chemical Interpretation of Amphoteric Influence of Bismuth Impurity in Tin Telluride
Models of point defects of doped by bismuth tin telluride crystals considering amphoteric influence of dopant ( ) have been specified. The influence of disproportionation of charge state of impurity on the conductivity t...
Edge Absorption of thin Films b–Ga2O3
Fundamental absorption edge of b–Ga2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated, using the method of optical spectroscopy. It was ascertained that the optical band gap Eg increase...
Research of High-Temperature Heat and Mass Transfer and Oxidation of Samples of Refractory Metals in the Air
The stationary modes of high temperature heat and mass transfer and the oxidation of conductors of refractory metals (tungsten and molybdenum) in the air are studied. The kinetics of oxides growth on the surface of these...
Photoluminescence nc-Si/SiOx Porous Structures Implanted Carbon Ions
The influence of carbon ions implantation on photoluminescence (PL) of porous nc-Si/SiOx layers with columnar structure, formed by vacuum glance angle deposition and subsequent high temperature annealing of SiOx films. T...
Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate ont...