The Main Preparation Methods of Gan Films
Journal Title: IOSR Journals (IOSR Journal of Electrical and Electronics Engineering) - Year 2017, Vol 12, Issue 3
Abstract
Wide band-gap semiconductor materials have many properties such as the big forbidden band width, high thermal conductivity, high dielectric strength, low dielectric constant, high electron velocity (saturated speed). In numerous wide band-gap materials, GaN and group Ⅲ nitrides are noticeable. This is the third generation of new type of semiconductor material appeared after the second generation of semiconductor materials such as GaAs, InP, which can be widely used in high temperature electronics, power electronics, and high frequency, resistance to radiation and other fields. HVPE (hydride vapor phase epitaxy) is a kind of atmospheric pressure chemical vapor deposition technique. Its growth speed is fast, which can reach more than 100 um/h. Its manufacturing cost is low. The equipment process is relatively simple. It is the most effective way to grow thick film GaN and GaN crystal blocks. In this dissertation, we research the factors influencing on growing 4 inch GaN on sapphire substrate by vertical HVPE. We firstly design the reactor cavity structure of HVPE by using computer, then simulate and optimize the distance between substrate and the gas inlet. At last, the gravity and gas parameters influencing on the deposition of GaN is also discussed.
Authors and Affiliations
Fu Qiang
Keywords
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- EP ID EP387281
- DOI 10.9790/1676-1203042224.
- Views 124
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