The Method of Solid State Impurity Diffusion and Doping In 4H-SiC
Journal Title: International Journal of Fundamental Physical Sciences - Year 2013, Vol 3, Issue 4
Abstract
Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity doping by thermal diffusion in SiC is possible if there is a parallel mechanism, such as oxidation or silicidation that creates silicon or carbon vacancies, which then allows dopant impurities to diffuse into these vacancies. This paper describes the experimental procedures by which oxidation and silicidation can be used to generate vacancies and enhance impurity doping at temperatures below 1400 ºC.
Authors and Affiliations
Suwan Mendis, Chin-Che Tin, Ilkham G. Atabaev, Bakhtiyar G. Atabaev
Keywords
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- EP ID EP599189
- DOI 10.14331/ijfps.2013.330059
- Views 84
- Downloads 0
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