The Structural, Morphological and Electrical Characterizations of InGaAsP/InP Structure
Journal Title: Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji - Year 2016, Vol 4, Issue 3
Abstract
In this study, InGaAsP layer is grown on InP substrates by using Molecular Beam Epitaxy (MBE) technique. The structural and morphological properties of InGaAsP/InP structure have been investigated by means of high resolution x‒ray diffraction (HR‒XRD) and atomic force microscopy (AFM) measurements. In addition, the experimental forward and reverse bias current‒voltage (I‒V) characteristic of InGaAsP/InP structure was investigated at room temperature. The electrical parameters such as idealite factor, barrier height and series resistance were extracted from forward bias I‒V characteristics.
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