Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 4
Abstract
In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiOx films after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-stoichiometric SiOx film after laser annealing. It is shown that temperature 1800 K on a SiOx surface is sufficient for separating the film material on silicon dioxide and its nanoparticles. IR-investigations confirm this separating.
Authors and Affiliations
O. O. Gavryliuk, O. Yu. Semchuk, B. V. Lytovchenko
Keywords
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- EP ID EP293206
- DOI 10.15330/pcss.16.4.675-678
- Views 38
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