Thermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 4
Abstract
On the basis of the analysis of the volume correspondence of the phases in the active gate system Si-SiO2, the possibility of obtaining a negative charge in the shutter system of submicron LSI is shown. Such a technological method has been experimentally verified at low temperature oxidation of silicon, which is a patent for an invention. Studies have established that the magnitude of charge at the interphase boundary can be significantly influenced by introducing into the oxidizing atmosphere of halogen-containing compounds.
Authors and Affiliations
S. P. Novosyadliy, V. M. Gryga, I. I. Kurysh, M. I. Melnyk
Keywords
Related Articles
- EP ID EP500807
- DOI 10.15330/pcss.19.4.352-357
- Views 74
- Downloads 0
Model of Mass Crystallization in Layers of Small Thickness
The model of mass crystallization, which allows to take into account the blocking effect of the growing crystals by surfaces of thin layers of melt or rapidly quenched amorphous ribbons is proposed. The kinetic equations...
Argand diagram and oscillator strength of In0.5Tl0.5I crystal
The dynamics of the electron subsystem parameters in In<sub>0.5</sub>Tl<sub>0.5</sub>I substitutional solid solutions has been studied theoretically using of the pseudopotential method. According to Kramers-Kronig method...
Thermodynamics of non-Newtonian fluids (drilling mud)
Using the method of pressure balance with balance energy forms, calculations are made hidrotermodynamichni mobile hydraulic flow in the well drilling fluids, water-based, which accumulate and transmit energy to other ele...
The Time Stability of Changes of the Fundamental Optical Absorption Edge of Amorphous GeSe Films Induced by g-Irradiation
The influence of ((Со60)-radiation at 104–106 Gy doses on the structure and optical properties of amorphous GeSe thin films obtained by the method of flash evaporation on the substrates at Ts = 293 K is being investigate...
Influence of Plasticizers on the Stress State of Epoxy Composites
The results of researches of influence of plasticizers and fillers on the stress state of epoxy composites during solidification and thermal shocks have been shown. It has been observed the influence of plasticizers base...