Thermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 4
Abstract
On the basis of the analysis of the volume correspondence of the phases in the active gate system Si-SiO2, the possibility of obtaining a negative charge in the shutter system of submicron LSI is shown. Such a technological method has been experimentally verified at low temperature oxidation of silicon, which is a patent for an invention. Studies have established that the magnitude of charge at the interphase boundary can be significantly influenced by introducing into the oxidizing atmosphere of halogen-containing compounds.
Authors and Affiliations
S. P. Novosyadliy, V. M. Gryga, I. I. Kurysh, M. I. Melnyk
Keywords
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- EP ID EP500807
- DOI 10.15330/pcss.19.4.352-357
- Views 64
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