THERMOELECTRIC COEFFICIENTS IN GENERALIZED ELECTRON TRANSPORT MODEL APPROACH
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 1
Abstract
On the basis of the «bottom – up» approach of Landauer – Datta – Lundstrom transport model the basic equations of thermoelectricity with the corresponding transport coefficients (conductivity, Seebeck and Peltier coefficients, Soret thermal diffusion coefficient, and electronic thermal conductivity for short-circuit case) for 1D conductors in the ballistic regime and 3D conductors in the diffusion regime with an arbitrary dispersion and for any size were strictly derived in the tutorial article for researchers, university teachers, and students. The examination was carried for n-semiconductors, the method how to generalize results for p-semiconductors case is also presented. The bipolar conductivity, Wiedemann – Franz law, and Mott correlation were discussed as well. The electron scattering processes were considered phenomenologically: the mean free pass was approximetaed by power law. In Appendix the thermoelectric coefficients for 1D, 2D, and 3D semiconductors with parabolic dispersion are presented.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
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- EP ID EP396802
- DOI 10.18524/1815-7459.2016.1.70265
- Views 84
- Downloads 0
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