EFFECT OF ULTRASOUND ON THE CURRENT FLOW IN LOW-RESISTANCE CRYSTALS OF CDTE:CL
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 1
Abstract
Тhe first this paper presents acousto-stimulated (AS) phenomena in low ohmic resistance n-type CdTe:Cl monocrystals (NCl≈1024 m-3) in dynamic regime (in-situ, fully reverse). For identification of the nature of acoustically-active defects a temperature investigations (77÷300 К) of electron concentration and mobility under ultrasound (US) influence (fUS~10 MHz, WUS~(0,1÷2,0)∙104 Wt/m2 ) and kinetics of relaxation σ(t) at US-on as well as at US-off have been carried out. There were proposed an acousto-dislocation mechanism that links: а) short-term (t<1 sec) changes σ(t) – with additional the charge carrier scattering on dislocations and clusters of point defects, that vibrate at US field; б) long-term (50÷500) sec temperature-dependent relaxations σ(t) are the result of diffusive process of the point-defect structure modification, including transformation an acceptor complex [(VCd 2-ClTe + )- ] into neutral one [(VCd 2-2ClTe + )0].
Authors and Affiliations
Ya. M. Olikh, M. D. Tymochko, M. I. Ilashchuk, O. A. Parfenyuk, K. S. Ulyanytskiy
Keywords
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- EP ID EP396840
- DOI 10.18524/1815-7459.2016.1.70320
- Views 104
- Downloads 0
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