EFFECT OF ULTRASOUND ON THE CURRENT FLOW IN LOW-RESISTANCE CRYSTALS OF CDTE:CL
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 1
Abstract
Тhe first this paper presents acousto-stimulated (AS) phenomena in low ohmic resistance n-type CdTe:Cl monocrystals (NCl≈1024 m-3) in dynamic regime (in-situ, fully reverse). For identification of the nature of acoustically-active defects a temperature investigations (77÷300 К) of electron concentration and mobility under ultrasound (US) influence (fUS~10 MHz, WUS~(0,1÷2,0)∙104 Wt/m2 ) and kinetics of relaxation σ(t) at US-on as well as at US-off have been carried out. There were proposed an acousto-dislocation mechanism that links: а) short-term (t<1 sec) changes σ(t) – with additional the charge carrier scattering on dislocations and clusters of point defects, that vibrate at US field; б) long-term (50÷500) sec temperature-dependent relaxations σ(t) are the result of diffusive process of the point-defect structure modification, including transformation an acceptor complex [(VCd 2-ClTe + )- ] into neutral one [(VCd 2-2ClTe + )0].
Authors and Affiliations
Ya. M. Olikh, M. D. Tymochko, M. I. Ilashchuk, O. A. Parfenyuk, K. S. Ulyanytskiy
Keywords
Related Articles
- EP ID EP396840
- DOI 10.18524/1815-7459.2016.1.70320
- Views 97
- Downloads 0
WAYS OF THE OPTICO-ELECTRONIC SENSOR INTELLECTUALIZATION
In the work one of effective methods of optico-electronic sensor intellectualization which is based on the comparison, analysis and processing of the aprioristic and current information on investigation object is describ...
PROSPECTS FOR THE USE OF CARBON NANOTUBES AS RESISTIVITY SENSORS OF CRO42- MOLECULAR ANIONS
The use of the carbon nanotubes (CNTs) as working materials of resistivity sensors of CrO42- anions, K2CrO4 and MCrO4 (M=Ca, Zn, Pb) molecular complexes is analyzed using results of theoretical modeling. The Density Func...
COMPARATIVE ANALYZE OF THE EFFICIENCY OF THE SENSOR STRUCTURES BASED ON “DEEP” SILICON P-N JUNCTION WITH ACTIVE LAYERS OF DIFFERENT ELECTRICAL CONDUCTIVITY TYPE
It is shown that efficiency of sensor structures based on deep silicon p-n junction significantly depends on the electrical conductivity type of the illuminated region. The structures can be effective in the case of pola...
SURFACE STATES IN THE SPHERICAL NANOCRYSTALS CDSE, CDTE
The energy of surface states has been define, which causes by the polarization charges on the interfaces, by numerical methods. It has been found conditions of their existence. Especially, it has been show that for hete...
EFFECT OF SUBSTRATE TEMPERATURE ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF AL-DOPED ZINC OXIDE THIN FILMS DEPOSITED BY LAYER-BY-LAYER METHOD AT MAGNETRON SPUTTERING
Al-doped ZnO (AZO) thin films were deposited by magnetron sputtering layer-by-layer growth method on silicon and glass substrates at different substrate temperatures. The atomic force microscopy analysis shows that AZO f...