Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: G. P. Gaidar, P. I. Baranskii Subject(s):
Тensoresistance of n-Si and n-Ge Multi-Valley Semiconductors Over a Wide Range of Concentrations Journal title: Фізика і хімія твердого тіла Authors: G.P. Gaidar, P.I. Baranskii, V.V. Kolomoets Subject(s):
