PHOTOSENSITIVE HETEROSTRUCTURE OF GaTe — THIN NANOSTRUCTURED DIELECTRIC — InSe Journal title: Международный научный журнал "Интернаука" Authors: Valery Katerynchuk, Bohdan Kushnir, Zakhar Kudrynskyi, Oksana Lytvyn Subject(s):
Electrical Properties of Cd Doped InSe Crystals Journal title: Фізика і хімія твердого тіла Authors: V. M. Kaminskii, Z.D. Kovalyuk, V.I. Ivanov, I.G. Tkachyuk, V.V. Netyaga Subject(s):
Preparation and characterization of CIS thin films obtained by electrodeposition onto ITO and Mo substrates Journal title: Journal of New technology and Materials Authors: Bachir Bordji, Souheil Mouetsi Subject(s): Technology, Chemical sciences, Physical sciences
REFINEMENT OF THE PHASE DIAGRAMS OF THE FeSe–Ga2Se3 AND Ga2Se3–In2Se3 SYSTEMS Journal title: Azerbaijan Chemical Journal Authors: F.M. Mammadov Subject(s):
Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method Journal title: Cumhuriyet Science journal Authors: Hüseyin Ertap, Mustafa Yüksek, Mevlüt Karabulut Subject(s):
