New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov Subject(s):
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: V.V. Korotyeyev Subject(s):
