Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit Journal title: Фізика і хімія твердого тіла Authors: S.P. Novosyadlyi, V.I. Mandzyuk, N.T. Humeniuk, І.Z. Huk Subject(s):
FEATURES OF THE FORMATION OF SCHOTTKY FIELD TRANSISTORS WITH A SELF-CONDENSED GATE ON THE BASIS OF NITRIDE AND TUNGSTEN SILICIDE Journal title: Международный научный журнал "Интернаука" Authors: Stepan Novosjadly, Nasar Humemjuk Subject(s):
