Investigation of Changes in Resistivity of n Si with Temperature and Uniaxial Stress Journal title: Фізика і хімія твердого тіла Authors: G. P. Gaidar Subject(s):
Тensoresistance of n-Si and n-Ge Multi-Valley Semiconductors Over a Wide Range of Concentrations Journal title: Фізика і хімія твердого тіла Authors: G.P. Gaidar, P.I. Baranskii, V.V. Kolomoets Subject(s):