A NOVEL FINFET BASED APPROACH FOR THE REALIZATION OF TERNARY GATES
Journal Title: ICTACT Journal on Microelectronics - Year 2016, Vol 2, Issue 2
Abstract
The Scaling of conventional Complementary Metal Oxide Semiconductors (CMOSs) has been facing problems such as short channel effect due to hot electron effect and leakage power. Fin Field Effect Transistor (FinFET) is considered as solution to this issue. Binary system occupies large area there for the circuit complexity is increasing on a VLSI chip and thus degrading the performance of binary system. Multi valued logic MVL is considered as solution to this issue. In this paper, to minimize short channel effect and reduce circuit complexity on a VLSI chip I have designed FinFET based ternary basic gates (T-NOT, ST-NAND, ST-NOR, ST-AND and ST-OR). FinFET is classified in to two types based on gate structure: 1) Short Gate FinFET (SG-FinFET) and 2) Independent Gate FinFET (IG-FinFET). The proposed ternary logic gates are design using SG-FinFET. Simulation is performed with Tanner EDA tool. The proposed design has achieved good reduction in the circuit element count.
Authors and Affiliations
Makani Nailesh Kishor, Satish S. Narkhede
Keywords
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- EP ID EP198681
- DOI 10.21917/ijme.2016.0043
- Views 132
- Downloads 0
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