Concentration and Size Dependences of a Polaron Binding Energy in AlxGa1-xAs/GaAs/AlxGa1-xAs Nanolayers
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
On approximation of dielectric continuum by Greene's function method, it is researched the influence of three-dimension constraints and interaction with optical phonons on the value of polaron energy in the quantum well of finite depth. For example nanolayer – a plane nanoheterostructure of quantum well, the binding energy of electron and hole polarons at different its values of thickness and different concentrations (x) of barrier material is calculated by of double heterojunction AlxGa1-xAs/GaAs. It is shown that the change in x affects on binding energy of the polaron in ultra-thin (50 nm) layers, where its value is formed mainly by interaction of the carrier and interface phonons.
Authors and Affiliations
D. V. Kondryuk, V. M. Kramar, I. Ya. Petryk
Keywords
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