Kinetics of Fragmentation During Annealing in Vacuum of Titanium Nanofilms Deposited Onto Non-Metallic Materials
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 2
Abstract
The results are presented of the study of kinetics of fragmentation of titanium nanofilms 100 nm thick deposited onto the surface of samples made from single crystals of Al2O3(leucosapphire), ZrO2, SiC, and AlN ceramics and annealed in vacuum at temperatures 1300 16000C with different exposition times at each temperature within 2 - 20 min range.
Authors and Affiliations
Yu. V. Naydich, I. I. Gab, T. V. Stetsyuk, B. D. Kostyuk, D. B. Shakhnin
Keywords
Related Articles
- EP ID EP264062
- DOI 10.15330/pcss.18.2.158-165
- Views 42
- Downloads 0
Peculiarities of Non-Stationary Temperature Distribution of Optical Non-Transparent Anisotropic Thermoelement at Impulse Ray Excitement
The solutions of non-stationary equation of thermoconductivity for the optical non-transparent thermoelement at impulse ray excitement are presented in the paper for two time ranges: when the ray current falls (0<t <t) a...
Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite...
Design and Simulation Elements of Analytical Microsystem-on-Chip With the Structures "Silicon-on-Insulator"
In this paper the results of architecture development, layout designof analytical microsystem-on-chip with the structures "silicon-on-insulator" (SOI) and its elements schemotechnical computer simulation for determine th...
Effect of Inhomogeneously Hetero-Deformed Quantum Limits Dot-Matrix for Quantum-Size States Charge
З врахуванням рівняння механічної рівноваги проведено розвиток теорії збурення форми напруженої гетеромежі "квантова точка-матриця". В рамках моделі деформаційного потенціалу з врахуванням збурення поверхні квантової точ...
Тensoresistance of n-Si and n-Ge Multi-Valley Semiconductors Over a Wide Range of Concentrations
In this paper, at Т = 77.4 К the tensoresistance of n-Si and n-Ge single crystals over a wide concentration range 101<ne <2 . 1019 cм 3 and the mechanical stresses 0 < Х < 1.5 GPa were studied and some of its features th...