Construction and Photoelectric Conversion Properties of WO3/BiVO4 Composite Film Photoelectrode
Journal Title: 河南科技大学学报（自然科学版） - Year 2019, Vol 40, Issue 4
Abstract
WO3 and BiVO4 semiconductor films eletrodes were prepared by polymer-assisted deposition method and metal-organic decomposition method, respectively. The band structures of WO3 and BiVO4 semiconductor films eletrode were characterized by solid-state UV-vis diffuse reflectance spectroscopy, electrochemical impedance spectroscopy and linear sweep voltammetry. The WO3/BiVO4 heterojunction composite photoelectrodes were prepared, and their cross-section morphology, crystal structure and elemental composition were analyzed by scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The photoelectric conversion performance of WO3/BiVO4 composite photoelectrode was also studied. The results show that between the monoclinic WO3 and BiVO4, type Ⅱ heterojunction is formed with the film thickness about 450 nm. At the applied potential of 1.23 V versus the reversible hydrogen electrode, the photocurrent density of WO3/BiVO4 composite photoelectrode is 1.926 mA/cm2, which reveals better photoelectric conversion performance.
Authors and Affiliations
Yuan ZHANG, Weiwei LU
Keywords
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- EP ID EP553935
- DOI 10.15926/j.cnki.issn1672-6871.2019.04.017
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