COULOMB BLOCADE AND SINGLE-ELECTRON TRANSISTOR WITHIN “BOTTOM – UP” APPROACH IN MODERN NANOELECTRONICS AND WITHIN TRADITIONAL “UP – BOTTOM” CONCEPT
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2017, Vol 14, Issue 3
Abstract
In a tutorial review article directed to serve researchers, university teachers and students, Coulomb blocade in one-molecule single-electron transistor SET is discussed under the «bottom – up» approach of modern nanoelectronics, and, for comparison, within the traditional “up-bottom” concept, using macroscopic characteristics, such as the capacitance of coducting channel etc. In a developed elementary theory of SET we obtained numeric estimations for limits of voltages for possible electronic transport from source to drain electrodes, as well as for conditions and parameters, under which experimental observation of Coulomb blocade effect with zero current through SET under non-zero voltage between source and drain is possible.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
Related Articles
- EP ID EP398623
- DOI 10.18524/1815-7459.2017.3.111403
- Views 89
- Downloads 0
AN ADVANCED LASER PHOTOIONIZATION SEPARATION SCHEME FOR RADIOACTIVE ISOTOPES AND PRODUCTS OF ATOMIC ENERGETICS: URANIUM AND THE TRANSURANIUM ELEMENTSV.
We present an advanced, optimal laser-photoionization scheme of separating heavy radioactive isotopes and nuclear isomers, in particular, the uranium isotopes and the transuranium elements. The advanced scheme is based o...
MULTIFUNCTIONAL QUARTZ SENSOR
Elaborated multifunctional pyroelectric device – watt/joule meter combines the functions of radiation power meter and radiation energy meter. Proposed techniques of pyroelectric sensors based on a consideration of the sp...
SEMICONDUCTOR INTEGRATED ELEMENTS BASED ON NANOSTRUCTURES SILICON FOR INFORMATION SYSTEMS
In this paper we consider the accelerometer sensor, which is made using the combined technology of silicon-on-insulator and silicon nanowires. On its basis a fast-response, high-speed, highly sensitive to acceleration an...
ABOUT PERFORMANCE LINEARITY OF THE ENVIRONMENT GAS HUMIDITY CAPACITIVE SENSORS BASED ON SILICON MOS STRUCTURES WITH A NANODIMENSIONAL SILICON OXIDE
The purpose of this work is to establish the reason for the performance linearity of the environment gas humidity capacitive sensors, based on silicon MOS structures with a nanodimensional silicon oxide being in depletio...
INFLUENCE OF THE THERMALLY ACTIVATED STRUCTURAL CONVERTING IN THE TIN DIOXIDE THIN FILM ON THEIR ELECTRIC PROPERTIES
To create industrial technology for preparation gas sensors and front electrode film solar cells effect of the magnetron power sputtering and oxygen concentrations in the working gas on the electrical conductivity SnO2 t...