COULOMB BLOCADE AND SINGLE-ELECTRON TRANSISTOR WITHIN “BOTTOM – UP” APPROACH IN MODERN NANOELECTRONICS AND WITHIN TRADITIONAL “UP – BOTTOM” CONCEPT
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2017, Vol 14, Issue 3
Abstract
In a tutorial review article directed to serve researchers, university teachers and students, Coulomb blocade in one-molecule single-electron transistor SET is discussed under the «bottom – up» approach of modern nanoelectronics, and, for comparison, within the traditional “up-bottom” concept, using macroscopic characteristics, such as the capacitance of coducting channel etc. In a developed elementary theory of SET we obtained numeric estimations for limits of voltages for possible electronic transport from source to drain electrodes, as well as for conditions and parameters, under which experimental observation of Coulomb blocade effect with zero current through SET under non-zero voltage between source and drain is possible.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
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- EP ID EP398623
- DOI 10.18524/1815-7459.2017.3.111403
- Views 90
- Downloads 0
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