GENERALIZED ELECTRON TRANSPORT MODEL FOR MICRO- AND NANOELECTRONICS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 3
Abstract
Generalized model of electron transport in the linear response regime developed by R. Landauer, S. Datta, and M. Lundstrom with application to the resistors of any dimension, any size and arbitrary dispersion working in ballistic, quasi-ballistic or diffusion regime is summarized in a tutorial article for the reseachers, university teachers and students. The LDL transport model is used to calculate conductivity of resistors of any dimension and scale and of an arbitrary dispersion working in the ballistic or diffusion regime as near 0º K and at higher temperatures. The concept of electron mobility, as well as the dissipation of heat and the voltage drop in the ballistic resistors are also under consideration.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
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- EP ID EP399087
- DOI 10.18524/1815-7459.2015.3.107685
- Views 75
- Downloads 0
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