DEFORMATION MODULATION OF ELECTRONIC STATES IN LAYERED CRYSTALS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2017, Vol 14, Issue 4
Abstract
The paper analyzes the changes in electronic states of a layered crystal caused by shear deformation of layers under action of the force consisting of both constant and harmonic components. It is shown that such deformation can change the component of lattice spacing by the magnitude of one layer thickness. In the frame of adiabatic approximation of the perturbation theory it is calculated the electronic states, whose degeneracy is removed by deformation perturbation, as well as the time moments of realization of degeneracy removal.
Authors and Affiliations
Y. M. Stakhira
Keywords
Related Articles
- EP ID EP398739
- DOI 10.18524/1815-7459.2017.4.119599
- Views 92
- Downloads 0
OPTIMIZATION OF PROCEDURE OF SEPARATE BIOSENSOR DETECTION OF AFLATOXINS AND PESTICIDES
A procedure of separate biosensor analysis of the multicomponent sample with aflatoxins and pesticides has been developed and optimized. Biosensor determination of aflatoxins and pesticides was performed using enzyme inh...
APPLICATION OF TEMPERATURE SENSORS FOR IMPROVING THE DEVICE BASED ON THE PHENOMENON OF SURFACE PLASMON RESONANCE
The device based on surface plasmon resonance (SPR) is used to determine the refraction index of liquids. At the same time, it is known that the value of this index depends on the temperature of this liquid. Therefore, t...
NEW SILICON MAGNETIC FIELD SENSOR
The structures in a form of planar silicon p-n junction were investigated. In their space charge region paramagnetic centers were induced by high energy He+ ions irradiation. These structures demonstrate a change of cond...
TRANSPORT OF HEAT BY PHONONS IN GENERALIZED LANDAUER – DATTA – LUNDSTROM MODEL
On the basis of Landauer – Datta – Lundstrom transport model the generalized model of heat transfer by phonons is formulated in a tutorial article for the reseachers, university teachers and students. Similarly to the Fe...
MEASURING OF CONDUCTIVITY AND ANALYSIS OF ELECTROPHYSICAL CHARACTERISTICS OF TRANSISTORS WITHIN GENERALIZED MODEL OF ELECTRON TRANSPORT
In a tutorial article directed to serve researchers, university teachers and students, we discuss experimental methods for measuring the resistance in the frame of the generalized transport Landauer – Datta – Lundstrom (...