NEW SILICON MAGNETIC FIELD SENSOR
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 2
Abstract
The structures in a form of planar silicon p-n junction were investigated. In their space charge region paramagnetic centers were induced by high energy He+ ions irradiation. These structures demonstrate a change of conductivity in the spin resonance conditions, which was confirmed experimentally. It was found that the magnitude of conductivity change is substantially independent of the magnetic field. This phenomenon can be used to create a wide-range magnetic field sensor, which requires no calibration.
Authors and Affiliations
V. G. Verbitskiy, K. V. Kryvokhyzha, O. G. Kukharenko, M. G. Tolmachov, O. V. Tretiak
Keywords
Related Articles
- EP ID EP396989
- DOI 10.18524/1815-7459.2016.2.73607
- Views 110
- Downloads 0
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